ST STGB25N40LZAG

ST · Thyristors & Power Discretes · MPN STGB25N40LZAG

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Specifications

Pd - Power Dissipation150W
Td(off)7.3us
Operating Temperature-55℃~+175℃
Td(on)1.1us
Current - Collector(Ic)25A
Collector-Emitter Breakdown Voltage (Vces)400V
Reverse Transfer Capacitance (Cres)14pF
Input Capacitance(Cies)1.011nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.7V
Vce Saturation(VCE(sat))1.1V
Gate Charge(Qg)26nC@13V
Output Capacitance(Coes)87pF

Technical details

150W 25A 400V D2PAK Single IGBTs RoHS

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