ST STGB20V60DF

ST · Thyristors & Power Discretes · MPN STGB20V60DF

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Specifications

Td(off)149ns
Pd - Power Dissipation167W
Td(on)38ns
Operating Temperature-
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)116nC
Reverse Recovery Time(trr)40ns
Switching Energy(Eoff)130uJ

Technical details

167W 40A 600V FS (Field Stop) D2PAK Single IGBTs RoHS

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