ST STGB20NB41LZT4

ST · Thyristors & Power Discretes · MPN STGB20NB41LZT4

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Specifications

Td(off)12.1us
Pd - Power Dissipation200W
Td(on)1us
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)442V
Reverse Transfer Capacitance (Cres)25pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1V@250uA
Vce Saturation(VCE(sat))2V@20A,4.5V
Switching Energy(Eoff)12.9mJ
Turn-On Energy (Eon)5mJ

Technical details

IGBT 442V 40A 200W Surface Mount D2PAK

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