ST STGB19NC60WT4

ST · Thyristors & Power Discretes · MPN STGB19NC60WT4

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Specifications

Td(off)90ns
Pd - Power Dissipation130W
Td(on)25ns
Operating Temperature-65℃~+150℃@(Tj)
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)53nC

Technical details

130W 40A 600V D2PAK Single IGBTs RoHS

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