ST · Thyristors & Power Discretes · MPN STGB19NC60KDT4
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| Td(off) | 105ns |
|---|---|
| Pd - Power Dissipation | 125W |
| Td(on) | 30ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 35A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 28pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.75V@15V,12A |
| Vce Saturation(VCE(sat)) | 2.75V@12A,15V |
| Reverse Recovery Time(trr) | 31ns |
| Switching Energy(Eoff) | 255uJ |
IGBT 600V 35A 125W Surface Mount D2PAK