ST · Thyristors & Power Discretes · MPN STGB18N40LZT4
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| Td(off) | 13.5us |
|---|---|
| Pd - Power Dissipation | 150W |
| Td(on) | 650ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 420V |
| Reverse Transfer Capacitance (Cres) | 5pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.2V@1mA |
| Vce Saturation(VCE(sat)) | 1.7V@10A,4.5V |
| Turn-On Energy (Eon) | - |
| Input Capacitance(Cies) | 490pF |
IGBT 420V 30A 150W Surface Mount TO-263AB