ST STGB15M65DF2

ST · Thyristors & Power Discretes · MPN STGB15M65DF2

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Specifications

Td(off)93ns
Pd - Power Dissipation136W
Td(on)24ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)25pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V
Vce Saturation(VCE(sat))1.55V
Collector Cut-Off Current (Ices)25uA
Reverse Recovery Time(trr)142ns

Technical details

136W 30A 650V FS (Field Stop) D2PAK Single IGBTs RoHS

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