ST STGB15H60DF

ST · Thyristors & Power Discretes · MPN STGB15H60DF

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Specifications

Td(off)118ns
Pd - Power Dissipation115W
Td(on)24.5ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)45pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))2V@15A,15V
Reverse Recovery Time(trr)103ns
Switching Energy(Eoff)207uJ

Technical details

IGBT FS (Field Stop) 600V 30A 115W Surface Mount D2PAK

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