ST · Thyristors & Power Discretes · MPN STGB14NC60KDT4
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| Td(off) | 116ns |
|---|---|
| Pd - Power Dissipation | 80W |
| Td(on) | 22.5ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 34.4nC |
| Reverse Recovery Time(trr) | 37ns |
| Switching Energy(Eoff) | 155uJ |
80W 25A 600V D2PAK Single IGBTs RoHS