ST · Thyristors & Power Discretes · MPN STGB10NC60KT4
No reviews yet — be the first to review ST STGB10NC60KT4.
| Td(off) | 72ns |
|---|---|
| Pd - Power Dissipation | 65W |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 17ns |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.5V@15V,5A |
| Gate Charge(Qg) | 19nC |
65W 20A 600V D2PAK Single IGBTs RoHS