ST · Thyristors & Power Discretes · MPN STGB10NC60KDT4
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| Td(off) | 72ns |
|---|---|
| Pd - Power Dissipation | 65W |
| Td(on) | 17ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 8.5pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA |
| Vce Saturation(VCE(sat)) | 2.5V@5A,15V |
| Reverse Recovery Time(trr) | 22ns |
| Switching Energy(Eoff) | 85uJ |
IGBT 600V 20A 65W Surface Mount D2PAK