ST · Thyristors & Power Discretes · MPN STGB10NC60HDT4
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| Td(off) | 72ns |
|---|---|
| Pd - Power Dissipation | 65W |
| Td(on) | 14.2ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.5V@15V,5A |
| Gate Charge(Qg) | 19.2nC |
| Reverse Recovery Time(trr) | 22ns |
65W 20A 600V D2PAK Single IGBTs RoHS