SPTECH · Thyristors & Power Discretes · MPN SPT75N65F1
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| Td(off) | 660ns |
|---|---|
| Pd - Power Dissipation | 416W |
| Td(on) | 110ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 100pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.6V@250uA |
| Vce Saturation(VCE(sat)) | 2.2V@75A,15V |
| Reverse Recovery Time(trr) | 75ns |
| Switching Energy(Eoff) | 8.4mJ |
IGBT FS (Field Stop) 650V Through Hole TO-247-3