SPTECH · Thyristors & Power Discretes · MPN SPT40N120T1B1
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| Td(off) | 230ns |
|---|---|
| Pd - Power Dissipation | 416W |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 55ns |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Vce Saturation(VCE(sat)) | 2.1V@40A,15V |
| Reverse Recovery Time(trr) | 190ns |
| Switching Energy(Eoff) | 1.5mJ |
| Turn-On Energy (Eon) | 2.4mJ |
IGBT FS (Field Stop) 1.2kV 40A 416W Through Hole TO-247-3