SPTECH · Thyristors & Power Discretes · MPN SPT40N120F1C
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| Td(off) | 230ns |
|---|---|
| Pd - Power Dissipation | 417W |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 60ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Vce Saturation(VCE(sat)) | 2.5V@40A,15V |
| Gate Charge(Qg) | 270nC@15V |
| Reverse Recovery Time(trr) | 250ns |
| Switching Energy(Eoff) | 800uJ |
IGBT FS (Field Stop) 1.2kV 80A 417W Through Hole TO-247-3