SPTECH SPT40N120F1A1

SPTECH · Thyristors & Power Discretes · MPN SPT40N120F1A1

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Specifications

Td(off)230ns
Pd - Power Dissipation417W
Operating Temperature-40℃~+150℃
Td(on)60ns
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@250uA
Vce Saturation(VCE(sat))2.5V@40A,15V
Reverse Recovery Time(trr)250ns
Switching Energy(Eoff)800uJ
Turn-On Energy (Eon)2.9mJ

Technical details

IGBT FS (Field Stop) 1.2kV 40A 417W Through Hole TO-247-3

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