SPTECH SPT25N120U1

SPTECH · Thyristors & Power Discretes · MPN SPT25N120U1

No reviews yet — be the first to review SPTECH SPT25N120U1.

Specifications

Pd - Power Dissipation210W
Td(off)297ns
Operating Temperature-40℃~+150℃
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.4V@250uA
Gate Charge(Qg)137nC@15V
Vce Saturation(VCE(sat))2.45V@25A,15V
Reverse Recovery Time(trr)420ns
Switching Energy(Eoff)650uJ
Turn-On Energy (Eon)3.3mJ

Technical details

IGBT FS (Field Stop) 1.2kV 50A 210W Through Hole TO-247-3

Related Thyristors & Power Discretes