SPTECH · Thyristors & Power Discretes · MPN SPT25N120T1
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| Td(off) | 200ns |
|---|---|
| Pd - Power Dissipation | 250W |
| Td(on) | 45ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@250uA |
| Vce Saturation(VCE(sat)) | 2.05V@25A,15V |
| Gate Charge(Qg) | 135nC@15V |
| Reverse Recovery Time(trr) | 180ns |
| Switching Energy(Eoff) | 750uJ |
IGBT FS (Field Stop) 1.2kV 50A 250W Through Hole TO-247-3