SPTECH SPT25N120T1

SPTECH · Thyristors & Power Discretes · MPN SPT25N120T1

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Specifications

Td(off)200ns
Pd - Power Dissipation250W
Td(on)45ns
Operating Temperature-40℃~+150℃
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V@250uA
Vce Saturation(VCE(sat))2.05V@25A,15V
Gate Charge(Qg)135nC@15V
Reverse Recovery Time(trr)180ns
Switching Energy(Eoff)750uJ

Technical details

IGBT FS (Field Stop) 1.2kV 50A 250W Through Hole TO-247-3

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