SPTECH SPT25N120F1A1

SPTECH · Thyristors & Power Discretes · MPN SPT25N120F1A1

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Specifications

Td(off)180ns
Operating Temperature-40℃~+150℃
Td(on)35ns
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)50pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@250uA
Vce Saturation(VCE(sat))2.5V@25A,15V
Reverse Recovery Time(trr)420ns
Switching Energy(Eoff)320uJ
Turn-On Energy (Eon)2mJ

Technical details

IGBT FS (Field Stop) 1.2kV 50A Through Hole TO-247-3

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