SPTECH · Thyristors & Power Discretes · MPN SPT20N120F1
No reviews yet — be the first to review SPTECH SPT20N120F1.
| Pd - Power Dissipation | 208W |
|---|---|
| Td(off) | 300ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 60ns |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@0.25mA |
| Gate Charge(Qg) | 140nC@15V |
| Vce Saturation(VCE(sat)) | 2.3V@20A,15V |
| Reverse Recovery Time(trr) | 270ns |
| Switching Energy(Eoff) | 430uJ |
IGBT FS (Field Stop) 1.2kV 40A 208W Through Hole TO-247-3