SPTECH SPT200N65F1A1

SPTECH · Thyristors & Power Discretes · MPN SPT200N65F1A1

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Specifications

Operating Temperature-40℃~+175℃
Current - Collector(Ic)200A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@200mA
Vce Saturation(VCE(sat))1.9V@200A,15V
Collector Cut-Off Current (Ices)40uA

Technical details

IGBT FS (Field Stop) 650V 200A Through Hole TO-247P

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