SPTECH · Thyristors & Power Discretes · MPN SPT15N120T1
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| Pd - Power Dissipation | 208W |
|---|---|
| Td(off) | 330ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 55ns |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@250uA |
| Gate Charge(Qg) | 137nC@15V |
| Vce Saturation(VCE(sat)) | 2.1V@15A,15V |
| Reverse Recovery Time(trr) | 270ns |
| Switching Energy(Eoff) | 310uJ |
IGBT FS (Field Stop) 1.2kV 30A 208W Through Hole TO-247-3