SPTECH SPT15N120T1

SPTECH · Thyristors & Power Discretes · MPN SPT15N120T1

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Specifications

Pd - Power Dissipation208W
Td(off)330ns
Operating Temperature-40℃~+150℃
Td(on)55ns
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V@250uA
Gate Charge(Qg)137nC@15V
Vce Saturation(VCE(sat))2.1V@15A,15V
Reverse Recovery Time(trr)270ns
Switching Energy(Eoff)310uJ

Technical details

IGBT FS (Field Stop) 1.2kV 30A 208W Through Hole TO-247-3

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