SPTECH SPT15N120F1

SPTECH · Thyristors & Power Discretes · MPN SPT15N120F1

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Specifications

Td(off)80ns
Operating Temperature-40℃~+150℃
Current - Collector(Ic)15A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)35pF
Input Capacitance(Cies)1.655nF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V
Vce Saturation(VCE(sat))1.9V
Output Capacitance(Coes)72pF
Gate Charge(Qg)101nC@15V
Reverse Recovery Time(trr)70ns

Technical details

IGBT FS (Field Stop) 1.2kV Through Hole TO-247-3

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