SPTECH · Thyristors & Power Discretes · MPN SPT10N120T1
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| Pd - Power Dissipation | 260W |
|---|---|
| Td(off) | 70ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 22ns |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@250uA |
| Vce Saturation(VCE(sat)) | 1.95V@10A,15V |
| Gate Charge(Qg) | 84nC@15V |
| Reverse Recovery Time(trr) | 270ns |
| Switching Energy(Eoff) | 170uJ |
IGBT FS (Field Stop) 1.2kV 20A 260W Through Hole TO-247-3