SPTECH · Thyristors & Power Discretes · MPN IKW50N65H5
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| Pd - Power Dissipation | 260W |
|---|---|
| Td(off) | 170ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 60ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Vce Saturation(VCE(sat)) | 2V@50A,15V |
| Reverse Recovery Time(trr) | 90ns |
| Switching Energy(Eoff) | 600uJ |
| Turn-On Energy (Eon) | 2.2mJ |
IGBT FS (Field Stop) 650V 100A 260W Through Hole TO-247-3