Siliup · Thyristors & Power Discretes · MPN SP20G65TD
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| Pd - Power Dissipation | 150W;75W |
|---|---|
| Td(off) | 120ns;141ns |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 40A;20A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 13pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.7V |
| Vce Saturation(VCE(sat)) | 1.6V;2V |
| Collector Cut-Off Current (Ices) | 50uA |
| Reverse Recovery Time(trr) | 62ns;90ns |
| Switching Energy(Eoff) | 460uJ;670uJ |
650V TO-263 Single IGBTs RoHS