Siliup · Thyristors & Power Discretes · MPN SP10G65TH
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| Td(off) | 74ns |
|---|---|
| Pd - Power Dissipation | 75W;38W |
| Td(on) | 12ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 10A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 10pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Vce Saturation(VCE(sat)) | 1.8V |
| Collector Cut-Off Current (Ices) | 50uA |
| Reverse Recovery Time(trr) | 57ns |
| Switching Energy(Eoff) | 170uJ |
10A 650V TO-252 Single IGBTs RoHS