ROHM RGW80TS65DGC11

ROHM · Thyristors & Power Discretes · MPN RGW80TS65DGC11

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Specifications

Pd - Power Dissipation214W
Td(off)143ns
Operating Temperature-40℃~+175℃@(Tj)
Td(on)44ns
Current - Collector(Ic)78A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.9V@15V,40A
Gate Charge(Qg)110nC
Reverse Recovery Time(trr)92ns

Technical details

214W 78A 650V FS (Field Stop) TO-247N Single IGBTs RoHS

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