ROHM RGW80TS65CHRC11

ROHM · Thyristors & Power Discretes · MPN RGW80TS65CHRC11

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Specifications

Td(off)145ns
Pd - Power Dissipation214W
Td(on)43ns
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)81A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.9V@15V,40A
Gate Charge(Qg)110nC
Reverse Recovery Time(trr)33ns
Switching Energy(Eoff)340uJ

Technical details

214W 81A 650V TO-247N Single IGBTs RoHS

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