ROHM RGW80TK65DGVC11

ROHM · Thyristors & Power Discretes · MPN RGW80TK65DGVC11

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Specifications

Td(off)143ns
Pd - Power Dissipation81W
Operating Temperature-40℃~+175℃@(Tj)
Td(on)44ns
Current - Collector(Ic)39A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)110nC
Reverse Recovery Time(trr)92ns

Technical details

81W 39A 650V SC-93-3 Single IGBTs RoHS

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