ROHM RGTVX6TS65DGC11

ROHM · Thyristors & Power Discretes · MPN RGTVX6TS65DGC11

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Specifications

Pd - Power Dissipation404W
Td(off)201ns
Operating Temperature-40℃~+175℃@(Tj)
Td(on)45ns
Current - Collector(Ic)144A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)79pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V
Vce Saturation(VCE(sat))1.5V
Collector Cut-Off Current (Ices)10uA
Reverse Recovery Time(trr)109ns

Technical details

IGBT 650V 144A 404W Through Hole TO-247N

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