ROHM RGTH60TS65DGC13

ROHM · Thyristors & Power Discretes · MPN RGTH60TS65DGC13

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Specifications

Td(off)105ns
Pd - Power Dissipation194W
Td(on)27ns
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)58A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)58nC
Reverse Recovery Time(trr)58ns
Turn-On Energy (Eon)-

Technical details

194W 58A 650V TO-247GE Single IGBTs RoHS

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