ROHM · Thyristors & Power Discretes · MPN RGTH50TS65DGC11
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| Pd - Power Dissipation | 174W |
|---|---|
| Td(off) | 94ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 27ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,25A |
| Gate Charge(Qg) | 49nC |
| Reverse Recovery Time(trr) | 58ns |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
174W 50A 650V FS (Field Stop) TO-247N Single IGBTs RoHS