ROHM · Thyristors & Power Discretes · MPN RGT8NS65DGTL
No reviews yet — be the first to review ROHM RGT8NS65DGTL.
| Pd - Power Dissipation | 65W |
|---|---|
| Td(off) | 69ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 17ns |
| Current - Collector(Ic) | 8A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 4.5pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@2.8mA |
| Vce Saturation(VCE(sat)) | 2.1V@4A,15V |
| Reverse Recovery Time(trr) | 40ns |
| Input Capacitance(Cies) | 220pF |
65W 8A 650V TO-263-3 Single IGBTs RoHS