ROHM · Thyristors & Power Discretes · MPN RGT8NS65DGC9
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| Pd - Power Dissipation | 65W |
|---|---|
| Td(off) | 69ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 17ns |
| Current - Collector(Ic) | 8A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,4A |
| Gate Charge(Qg) | 13.5nC |
| Reverse Recovery Time(trr) | 40ns |
65W 8A 650V FS (Field Stop) TO-262 Single IGBTs RoHS