ROHM RGT8BM65DTL

ROHM · Thyristors & Power Discretes · MPN RGT8BM65DTL

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Specifications

Td(off)69ns
Pd - Power Dissipation62W
Operating Temperature-40℃~+175℃@(Tj)
Td(on)17ns
Current - Collector(Ic)8A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)13.5nC
Reverse Recovery Time(trr)40ns

Technical details

62W 8A 650V TO-252 Single IGBTs RoHS

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