ROHM RGT80TS65DGC11

ROHM · Thyristors & Power Discretes · MPN RGT80TS65DGC11

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Specifications

Pd - Power Dissipation234W
Td(off)119ns
Operating Temperature-40℃~+175℃@(Tj)
Td(on)34ns
Current - Collector(Ic)70A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)79nC
Reverse Recovery Time(trr)58ns

Technical details

234W 70A 650V TO-247N Single IGBTs RoHS

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