ROHM RGT60TS65DGC11

ROHM · Thyristors & Power Discretes · MPN RGT60TS65DGC11

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Specifications

Td(off)100ns
Pd - Power Dissipation194W
Td(on)29ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)55A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)29pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Vce Saturation(VCE(sat))2.1V@30A,15V
Reverse Recovery Time(trr)58ns
Input Capacitance(Cies)1.73nF

Technical details

194W 55A 650V TO-247N Single IGBTs RoHS

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