ROHM RGT50TS65DGC11

ROHM · Thyristors & Power Discretes · MPN RGT50TS65DGC11

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Specifications

Pd - Power Dissipation174W
Td(off)88ns
Operating Temperature-
Td(on)27ns
Current - Collector(Ic)48A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)49nC
Reverse Recovery Time(trr)58ns

Technical details

174W 48A 650V TO-247N Single IGBTs RoHS

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