ROHM RGT50TM65DGC9

ROHM · Thyristors & Power Discretes · MPN RGT50TM65DGC9

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Specifications

Pd - Power Dissipation47W
Td(off)88ns
Operating Temperature-40℃~+175℃@(Tj)
Td(on)27ns
Current - Collector(Ic)21A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,25A
Gate Charge(Qg)49nC
Reverse Recovery Time(trr)58ns
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

47W 21A 650V FS (Field Stop) TO-220 Single IGBTs RoHS

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