ROHM · Thyristors & Power Discretes · MPN RGT40NS65DGTL
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| Pd - Power Dissipation | 161W |
|---|---|
| Td(off) | 75ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 22ns |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 18pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Vce Saturation(VCE(sat)) | 2.1V@20A,15V |
| Reverse Recovery Time(trr) | 58ns |
| Input Capacitance(Cies) | 1.07nF |
161W 40A 650V TO-263-3 Single IGBTs RoHS