ROHM · Thyristors & Power Discretes · MPN RGT40NS65DGC9
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| Td(off) | 75ns |
|---|---|
| Pd - Power Dissipation | 161W |
| Td(on) | 22ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,20A |
| Gate Charge(Qg) | 40nC |
| Reverse Recovery Time(trr) | 58ns |
| Turn-On Energy (Eon) | - |
161W 40A 650V FS (Field Stop) TO-262 Single IGBTs RoHS