ROHM RGT30TM65DGC9

ROHM · Thyristors & Power Discretes · MPN RGT30TM65DGC9

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Specifications

Td(off)64ns
Pd - Power Dissipation32W
Td(on)18ns
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)14A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)-
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,15A
Gate Charge(Qg)32nC
Reverse Recovery Time(trr)55ns
Turn-On Energy (Eon)-

Technical details

32W 14A 650V FS (Field Stop) TO-220NFM Single IGBTs RoHS

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