ROHM RGT30NL65DGTL

ROHM · Thyristors & Power Discretes · MPN RGT30NL65DGTL

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Specifications

Pd - Power Dissipation133W
Td(off)64ns
Operating Temperature-40℃~+175℃@(Tj)
Td(on)18ns
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)32nC
Reverse Recovery Time(trr)55ns
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

133W 30A 650V TO-263-3 Single IGBTs RoHS

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