ROHM RGT00TS65DGC11

ROHM · Thyristors & Power Discretes · MPN RGT00TS65DGC11

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Specifications

Td(off)137ns
Pd - Power Dissipation277W
Operating Temperature-40℃~+175℃@(Tj)
Td(on)42ns
Current - Collector(Ic)85A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V@34.7mA
Vce Saturation(VCE(sat))1.65V@50A,15V
Reverse Recovery Time(trr)54ns
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

277W 85A 650V TO-247-3 Single IGBTs RoHS

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