ROHM · Thyristors & Power Discretes · MPN RGT00TS65DGC11
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| Td(off) | 137ns |
|---|---|
| Pd - Power Dissipation | 277W |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 42ns |
| Current - Collector(Ic) | 85A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@34.7mA |
| Vce Saturation(VCE(sat)) | 1.65V@50A,15V |
| Reverse Recovery Time(trr) | 54ns |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
277W 85A 650V TO-247-3 Single IGBTs RoHS