ROHM · Thyristors & Power Discretes · MPN RGS80TS65DHRC11
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| Td(off) | 112ns |
|---|---|
| Pd - Power Dissipation | 272W |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 37ns |
| Current - Collector(Ic) | 73A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 16pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@2.0mA |
| Reverse Recovery Time(trr) | 103ns |
| Switching Energy(Eoff) | 1.03mJ |
| Turn-On Energy (Eon) | 1.05mJ |
272W 73A 650V TO-247N Single IGBTs RoHS