ROHM · Thyristors & Power Discretes · MPN RGS00TS65DHRC11
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| Td(off) | 115ns |
|---|---|
| Pd - Power Dissipation | 326W |
| Td(on) | 36ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 88A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,50A |
| Gate Charge(Qg) | 58nC |
| Reverse Recovery Time(trr) | 103ns |
| Switching Energy(Eoff) | 1.29mJ |
326W 88A 650V FS (Field Stop) TO-247N Single IGBTs RoHS