RENESAS · Thyristors & Power Discretes · MPN RJP65T43DPQ-A0#T2
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| Td(off) | 105ns |
|---|---|
| Pd - Power Dissipation | 150W |
| Operating Temperature | - |
| Td(on) | 35ns |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 69nC |
150W 60A 650V TO-247A Single IGBTs RoHS