RENESAS RJP65T43DPM-00#T1

RENESAS · Thyristors & Power Discretes · MPN RJP65T43DPM-00#T1

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Specifications

Td(off)107ns
Pd - Power Dissipation68.8W
Td(on)30ns
Operating Temperature-
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.4V@15V,20A
Gate Charge(Qg)70nC
Switching Energy(Eoff)110uJ
Turn-On Energy (Eon)170uJ

Technical details

68.8W 40A 650V TO-3PFM Single IGBTs RoHS

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