RENESAS RJH65T46DPQ-A0#T0

RENESAS · Thyristors & Power Discretes · MPN RJH65T46DPQ-A0#T0

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Specifications

Td(off)170ns
Pd - Power Dissipation340.9W
Operating Temperature-
Td(on)45ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.4V@15V,40A
Gate Charge(Qg)138nC
Reverse Recovery Time(trr)100ns

Technical details

340.9W 80A 650V TO-247A Single IGBTs RoHS

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